1.PolyDiode 的組成結構與電氣特性 <For More> 2006.11.07 2.PolyDiode 四系列完整推出，可大量供應國內電子業界優質的 SMD Type ESD保護元器件<For More> 2006.06.28 3.ESD、EMC對策中心 專為客戶解決系統電路有關 ESD、EMC之FAE部門 <For More> 2006.01.10 4.解決ESD的最佳防護對策 鑑於電子組裝系統，受到靜電放電(ESD)之侵襲，可能引起Data bits資料重複判讀，或使IC的功能失效，最嚴重的是I/O ports以及整個系統慘遭ESD毀滅性的傷害.... <詳細內容請點選> 2005.11.07 5.PolyDiodeTM Electromagnetic Compatibility Countermeasure for Transient Surge and Static Electricity <For More> 2005.12.22

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News1. 2005.11.07

JumboTek/Electronics

CIRCUIT PROTECTION

JumboTek announcing the release of ESD protection devices offers several advantages for safeguard low voltage electronic against power surges.

JumboTek, as a leading components manufacturer of over-voltage protection, has newly developed an innovatory product which made of polycrystalline mixed oxide ceramics. This is the world 1st successfully researched and developed a semiconductor in ceramic protective device-PolyDiode^TM which combines the advantages of Silicon TVS diode and Multi-Layer Varistor and still offers
you excellent electrical performance.

More info about PolyDiode^TM

The specification comparison for PolyDiode, Silicon TVS diode and MLV (Multilayer Varistor)：

	Characteristics and features
Device Type	Clamping factors (ratio of clamping voltage to breakdown voltage)	Peak current capability (8*20μs)	ESD durability (repetitive strike)(*1)	Response Time (*2)	Leakage current (*3)
PolyDiode	1.25~1.6(Excellent)	Excellent	>60000	<0.5nSec.	<5μA
TVS diode	1.3~1.6(Excellent)	N/S(*4)	Unidirectional<100 Bidirectional<1000	Between 0.8nSec. and 3nSec.	<100μA
MLV	1.8~3.5(Moderate)(*5)	Good	Between1000 and 10000	<1.0nSec.	<10μA

REMARKS: (*1) Withstand ESD durability test severity of IEC 61000-4-2 level 4. (*2) Fast time operation response to protect the USB components against the fast rise time of the ESD pulses. (*3) Low leakage current to minimize the power consumption under normal operation conditions. (*4) The TVS diodes are not sufficient for a peak surge current. PolyDiode keeps symmetrical I-V characteristics even after suppressing extremely fast voltage transients, including electrostatic absorption and pulse noise absorption. (*5) The main disadvantage of a MLV’s clamping voltage is typically higher than a comparable PolyDiode or TVS diode. MLVs are mainly used for ESD on less sensitive lines where their higher clamping voltages can be tolerated. NO. 157, Sec. 2, Kuang-ming Road, Lu-chu, Taoyaun 338, Taiwan Tel: 886-3-212-2595 Fax: 886-3-212-2596 http://www.jumbotek.com E-mail: service@jumbotek.com